SI5515CDC-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI5515CDC-T1-GE3
Datasheet:
Description:
MOSFETs ChipFET-8 SMD/SMT N-Channel, P-Channel number of channels:2 1.3 W 20 V Continuous Drain Current (ID):4 A 11.3 nC, 11 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 2 |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 400 mV |
| Number of Channels | 2 |
| Input capacitance | 632 pF |
| Continuous Drain Current (ID) | 4 A |
| Rds On Max | 36 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
| Gate Charge | 11.3 nC, 11 nC |
| Drain to Source Resistance | 83 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 400 mV, 800 mV |
Stock: 23087
Distributors
pcbx
pcbxUnit Price$0.75747
Ext.Price$0.75747
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.75747 | $0.75747 |
| 10 | $0.47620 | $4.76200 |
| 25 | $0.41438 | $10.35950 |
| 50 | $0.36058 | $18.02900 |
| 100 | $0.31376 | $31.37600 |
| 300 | $0.27650 | $82.95000 |
| 500 | $0.24366 | $121.83000 |
| 1000 | $0.22143 | $221.43000 |
| 3000 | $0.19236 | $577.08000 |
| 5000 | $0.17099 | $854.95000 |