SI5517DU-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI5517DU-T1-GE3
Datasheet:
Description:
MOSFETs ChipFET-8 SMD/SMT N-Channel, P-Channel number of channels:2 8.3 W 20 V Continuous Drain Current (ID):6 A 16 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 8.3 W |
| Number of Channels | 2 |
| Input capacitance | 520 pF |
| Continuous Drain Current (ID) | 6 A |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
| Gate Charge | 16 nC |
| Drain to Source Resistance | 39 mΩ |
| Gate to Source Voltage (Vgs) | -8 V, 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Gate to Source Threshold Voltage | 400 mV |
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