SI5908DC-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI5908DC-T1-GE3
Datasheet:
Description:
MOSFETs ChipFET-8 SMD/SMT N-Channel number of channels:2 2.1 W 20 V Continuous Drain Current (ID):4.4 A 7.5 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Weight | 84.99187 mg |
| Max Power Dissipation | 1.1 W |
| Power Dissipation | 2.1 W |
| Number of Channels | 2 |
| Continuous Drain Current (ID) | 4.4 A |
| Rds On Max | 40 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Dual |
| Rise Time | 36 ns |
| Gate Charge | 7.5 nC |
| Drain to Source Resistance | 40 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 400 mV |
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