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SI5935CDC-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI5935CDC-T1-GE3

Datasheet:
Description:

MOSFETs SMD/SMT SMD/SMT P-Channel number of channels:2 1.3 W 20 V Continuous Drain Current (ID):3.1 A 11 nC

ParameterValue
Length3.1 mm
Width1.7 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance100 mΩ
Height1.1 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements2
Max Power Dissipation3.1 W
Power Dissipation1.3 W
Threshold Voltage-1 V
Number of Channels2
Input capacitance455 pF
Continuous Drain Current (ID)3.1 A
Rds On Max100 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time10 ns
Turn-Off Delay Time25 ns
Element ConfigurationDual
Fall Time6 ns
Rise Time32 ns
Gate Charge11 nC
Drain to Source Resistance100 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)20 V
Schedule B8541290080
Gate to Source Threshold Voltage400 mV
FET Type(Transistor Polarity)P-Channel

Stock: 1066

Distributors
pcbx
Unit Price$0.29222
Ext.Price$0.29222
QtyUnit PriceExt.Price
1$0.29222$0.29222
10$0.25238$2.52380
25$0.23970$5.99250
50$0.22765$11.38250
100$0.21621$21.62100
300$0.21096$63.28800
500$0.20583$102.91500
1000$0.19982$199.82000