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SI6562CDQ-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI6562CDQ-T1-GE3

Datasheet:
Description:

MOSFETs TSSOP-8 SMD/SMT N-Channel, P-Channel number of channels:2 1.6 W, 1.7 W 20 V Continuous Drain Current (ID):6.1 A 15 nC, 34 nC

ParameterValue
Length3 mm
Width4.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements2
Max Power Dissipation1.7 W
Power Dissipation1.6 W, 1.7 W
Threshold Voltage600 mV
Number of Channels2
Input capacitance850 pF
Continuous Drain Current (ID)6.1 A
Rds On Max22 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time30 ns
Turn-Off Delay Time45 ns
Fall Time25 ns
Rise Time25 ns
Gate Charge15 nC, 34 nC
Drain to Source Resistance24 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)20 V
Schedule B8541290080
Gate to Source Threshold Voltage600 mV
FET Type(Transistor Polarity)N-Channel, P-Channel

Stock: 1454

Distributors
pcbx
Unit Price$0.77216
Ext.Price$0.77216
QtyUnit PriceExt.Price
1$0.77216$0.77216
10$0.61641$6.16410
25$0.55991$13.99775
50$0.50859$25.42950
100$0.46198$46.19800
300$0.43779$131.33700
500$0.41487$207.43500
1000$0.39131$391.31000