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SI6913DQ-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI6913DQ-T1-GE3

Datasheet:
Description:

MOSFETs TSSOP-8 SMD/SMT P-Channel number of channels:2 830 mW -12 V Continuous Drain Current (ID):4.9 A 28 nC

ParameterValue
Length3 mm
Width4.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance21 mΩ
Height1 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Weight0.158 g
Contact PlatingTin
Number of Elements2
Max Power Dissipation830 mW
Power Dissipation830 mW
Threshold Voltage-900 mV
Number of Channels2
Continuous Drain Current (ID)4.9 A
Rds On Max21 mΩ
Drain to Source Voltage (Vdss)12 V
Turn-On Delay Time45 ns
Turn-Off Delay Time130 ns
Element ConfigurationDual
Rise Time80 ns
Gate Charge28 nC
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-12 V
Schedule B8541290080
Gate to Source Threshold Voltage400 mV
FET Type(Transistor Polarity)P-Channel

Stock: 2449

Distributors
pcbx
Unit Price$1.38926
Ext.Price$1.38926
QtyUnit PriceExt.Price
1$1.38926$1.38926
10$0.91990$9.19900
25$0.81959$20.48975
50$0.73022$36.51100
100$0.65060$65.06000
300$0.61046$183.13800
500$0.57280$286.40000
1000$0.48218$482.18000
3000$0.43174$1295.22000
5000$0.41207$2060.35000