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SI6968BEDQ-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI6968BEDQ-T1-GE3

Datasheet:
Description:

MOSFETs TSSOP-8 SMD/SMT N-Channel number of channels:2 1 W 20 V Continuous Drain Current (ID):5.2 A 18 nC

ParameterValue
Length3 mm
Width4.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance22 MΩ
Height1 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Weight0.158 g
Number of Elements2
Max Power Dissipation1 W
Power Dissipation1 W
Number of Channels2
Continuous Drain Current (ID)5.2 A
Rds On Max22 mΩ
Drain to Source Voltage (Vdss)20 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time245 ns
Turn-Off Delay Time860 ns
Element ConfigurationDual
Rise Time330 ns
Gate Charge18 nC
Drain to Source Resistance16.5 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)20 V
Schedule B8541290080
Gate to Source Threshold Voltage600 mV

Stock: 30

Distributors
pcbx
Unit Price$0.63139
Ext.Price$0.63139
QtyUnit PriceExt.Price
1$0.63139$0.63139
10$0.61075$6.10750
25$0.60334$15.08350
50$0.59602$29.80100
100$0.58879$58.87900