SI7113DN-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI7113DN-T1-E3
Datasheet:
Description:
MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 3.7 W -100 V Continuous Drain Current (ID):3.5 A 35 nC
| Parameter | Value |
|---|---|
| Length | 3.05 mm |
| Width | 3.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Number of Pins | 8 |
| Resistance | 134 MΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Max Power Dissipation | 52 W |
| Power Dissipation | 3.7 W |
| Number of Channels | 1 |
| Input capacitance | 1.48 nF |
| Continuous Drain Current (ID) | 3.5 A |
| Rds On Max | 134 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 30 ns |
| Turn-Off Delay Time | 51 ns |
| Element Configuration | Single |
| Fall Time | 40 ns |
| Rise Time | 110 ns |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 134 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
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