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SI7113DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7113DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 52 W 100 V Continuous Drain Current (ID):13.2 A 55 nC

ParameterValue
Length3.3 mm
Width3.3 mm
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Number of Pins8
Resistance134 mΩ
Height1.04 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation52 W
Power Dissipation52 W
Threshold Voltage-1 V
Number of Channels1
Input capacitance1.48 nF
Continuous Drain Current (ID)13.2 A
Rds On Max134 mΩ
Drain to Source Voltage (Vdss)-100 V
Turn-On Delay Time11 ns
Turn-Off Delay Time42 ns
Element ConfigurationSingle
Rise Time110 ns
Gate Charge55 nC
Drain to Source Resistance134 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)-20 V, 20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 3

Distributors
pcbx
Unit Price$1.14432
Ext.Price$1.14432
QtyUnit PriceExt.Price
1$1.14432$1.14432
10$0.96182$9.61820
25$0.87494$21.87350
50$0.79591$39.79550
100$0.72401$72.40100
300$0.69627$208.88100
500$0.66959$334.79500
1000$0.64088$640.88000