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SI7119DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7119DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK1212-8 SMD/SMT P-Channel number of channels:1 3.7 W -200 V Continuous Drain Current (ID):1.2 A 25 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Number of Pins8
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation3.7 W
Power Dissipation3.7 W
Threshold Voltage-4 V
Number of Channels1
Input capacitance666 pF
Continuous Drain Current (ID)1.2 A
Rds On Max1.05 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Gate Charge25 nC
Drain to Source Resistance1.05 Ω
Nominal Vgs-4 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-200 V
Schedule B8541290080
Gate to Source Threshold Voltage2 V
FET Type(Transistor Polarity)P-Channel

Stock: 4477

Distributors
pcbx
Unit Price$0.67286
Ext.Price$0.67286
QtyUnit PriceExt.Price
1$0.67286$0.67286
10$0.54442$5.44420
25$0.49939$12.48475
50$0.45808$22.90400
100$0.42020$42.02000
300$0.39982$119.94600
500$0.38043$190.21500
1000$0.36065$360.65000