SI7121DN-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7121DN-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 3.7 W -30 V Continuous Drain Current (ID):10.6 A 50 nC
| Parameter | Value |
|---|---|
| Length | 3.05 mm |
| Width | 3.05 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 18 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 52 W |
| Power Dissipation | 3.7 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Input capacitance | 1.96 nF |
| Continuous Drain Current (ID) | 10.6 A |
| Rds On Max | 18 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 44 ns |
| Turn-Off Delay Time | 28 ns |
| Fall Time | 15 ns |
| Rise Time | 100 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 50 nC |
| Drain to Source Resistance | 18 mΩ |
| Nominal Vgs | -3 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2.5 V |
Stock: 638
Distributors
pcbx
pcbxUnit Price$0.46877
Ext.Price$0.46877
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.46877 | $0.46877 |
| 10 | $0.37296 | $3.72960 |
| 25 | $0.33957 | $8.48925 |
| 50 | $0.30917 | $15.45850 |
| 100 | $0.28149 | $28.14900 |
| 300 | $0.26701 | $80.10300 |
| 500 | $0.25327 | $126.63500 |
| 1000 | $0.23833 | $238.33000 |