SI7145DP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7145DP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT P-Channel number of channels:1 6.25 W -30 V Continuous Drain Current (ID):-60 A 413 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 2.6 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | S17-0173-Single |
| REACH SVHC | Unknown |
| Weight | 506.605978 mg |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 104 W |
| Power Dissipation | 6.25 W |
| Threshold Voltage | -2.3 V |
| Number of Channels | 1 |
| Input capacitance | 15.66 nF |
| Continuous Drain Current (ID) | -60 A |
| Rds On Max | 2.6 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 27 ns |
| Turn-Off Delay Time | 107 ns |
| Element Configuration | Single |
| Rise Time | 110 ns |
| Gate Charge | 413 nC |
| Drain to Source Resistance | 2.1 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -2.3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2.3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1323
Distributors
pcbx
pcbxUnit Price$1.63776
Ext.Price$1.63776
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.63776 | $1.63776 |
| 10 | $1.39075 | $13.90750 |
| 25 | $1.28221 | $32.05525 |
| 50 | $1.18214 | $59.10700 |
| 100 | $1.08989 | $108.98900 |
| 300 | $1.05334 | $316.00200 |
| 500 | $1.01802 | $509.01000 |
| 1000 | $0.98581 | $985.81000 |