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SI7157DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7157DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT P-Channel number of channels:1 6.25 W -20 V Continuous Drain Current (ID):-60 A 625 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Weight506.605978 mg
Contact PlatingTin
Number of Elements1
Max Power Dissipation104 W
Power Dissipation6.25 W
Threshold Voltage-1.4 V
Number of Channels1
Input capacitance22 nF
Continuous Drain Current (ID)-60 A
Rds On Max1.6 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time20 ns
Turn-Off Delay Time220 ns
Element ConfigurationSingle
Rise Time14 ns
Gate Charge625 nC
Drain to Source Resistance1.25 mΩ
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Gate to Source Threshold Voltage1.4 V
FET Type(Transistor Polarity)P-Channel

Stock: 12681

Distributors
pcbx
Unit Price$1.15757
Ext.Price$1.15757
QtyUnit PriceExt.Price
1$1.15757$1.15757
10$0.83869$8.38690
25$0.73563$18.39075
50$0.64524$32.26200
100$0.56596$56.59600
300$0.50497$151.49100
500$0.45055$225.27500
1000$0.41891$418.91000
3000$0.36506$1095.18000
5000$0.34881$1744.05000