SI7178DP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7178DP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 6.25 W 100 V Continuous Drain Current (ID):60 A 72 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 14 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 506.605978 mg |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 6.25 W |
| Power Dissipation | 6.25 W |
| Threshold Voltage | 4.5 V |
| Number of Channels | 1 |
| Input capacitance | 2.87 nF |
| Continuous Drain Current (ID) | 60 A |
| Rds On Max | 14 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 21 ns |
| Turn-Off Delay Time | 27 ns |
| Element Configuration | Single |
| Rise Time | 10 ns |
| Gate Charge | 72 nC |
| Drain to Source Resistance | 14 mΩ |
| Nominal Vgs | 4.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||