SI7192DP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7192DP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 6.25 W 30 V Continuous Drain Current (ID):60 A 135 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 1.9 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 506.605978 mg |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 6.25 W |
| Power Dissipation | 6.25 W |
| Number of Channels | 1 |
| Input capacitance | 5.8 nF |
| Continuous Drain Current (ID) | 60 A |
| Rds On Max | 1.9 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 41 ns |
| Turn-Off Delay Time | 86 ns |
| Rise Time | 26 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 135 nC |
| Drain to Source Resistance | 1.85 mΩ |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1
Distributors
pcbx
pcbxUnit Price$4.54550
Ext.Price$4.54550
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $4.54550 | $4.54550 |
| 10 | $4.45795 | $44.57950 |
| 25 | $4.43383 | $110.84575 |
| 50 | $4.40984 | $220.49200 |
| 100 | $4.38595 | $438.59500 |