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SI7252DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7252DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:2 3.5 W 100 V Continuous Drain Current (ID):36.7 A 27 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements2
Max Power Dissipation46 W
Power Dissipation3.5 W
Threshold Voltage1.5 V
Number of Channels2
Input capacitance1.17 nF
Continuous Drain Current (ID)36.7 A
Rds On Max17 mΩ
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time12 ns
Turn-Off Delay Time18 ns
Element ConfigurationDual
Fall Time7 ns
Rise Time12 ns
Gate Charge27 nC
Drain to Source Resistance18 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 27393

Distributors
pcbx
Unit Price$1.81501
Ext.Price$1.81501
QtyUnit PriceExt.Price
1$1.81501$1.81501
10$1.17638$11.76380
25$1.04045$26.01125
50$0.92023$46.01150
100$0.81390$81.39000
300$0.74189$222.56700
500$0.67625$338.12500
1000$0.61983$619.83000
3000$0.54801$1644.03000