SI7414DN-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7414DN-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 1.5 W 60 V Continuous Drain Current (ID):5.6 A 25 nC
| Parameter | Value |
|---|---|
| Length | 3.05 mm |
| Width | 3.05 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 25 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Output Current | 1.4 A |
| Max Power Dissipation | 1.5 W |
| Power Dissipation | 1.5 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 5.6 A |
| Rds On Max | 25 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Rise Time | 12 ns |
| Dual Supply Voltage | 60 V |
| Gate Charge | 25 nC |
| Drain to Source Resistance | 25 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
Stock: 8438
Distributors
pcbx
pcbxUnit Price$1.70217
Ext.Price$1.70217
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.70217 | $1.70217 |
| 10 | $1.08918 | $10.89180 |
| 25 | $0.95693 | $23.92325 |
| 50 | $0.84074 | $42.03700 |
| 100 | $0.73866 | $73.86600 |
| 300 | $0.67570 | $202.71000 |
| 500 | $0.61811 | $309.05500 |
| 1000 | $0.54459 | $544.59000 |
| 3000 | $0.50356 | $1510.68000 |
| 5000 | $0.48646 | $2432.30000 |