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SI7456DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7456DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 1.9 W 100 V Continuous Drain Current (ID):5.7 A 44 nC

ParameterValue
Length4.9 mm
Width5.89 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance25 mΩ
Height1.04 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation1.9 W
Power Dissipation1.9 W
Threshold Voltage2 V
Number of Channels1
Continuous Drain Current (ID)5.7 A
Rds On Max25 mΩ
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time14 ns
Turn-Off Delay Time46 ns
Element ConfigurationSingle
Fall Time10 ns
Rise Time10 ns
Gate Charge44 nC
Drain to Source Resistance25 mΩ
Nominal Vgs4 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage2 V
FET Type(Transistor Polarity)N-Channel

Stock: 1503

Distributors
pcbx
Unit Price$1.51267
Ext.Price$1.51267
QtyUnit PriceExt.Price
1$1.51267$1.51267
10$1.35830$13.58300
25$1.29457$32.36425
50$1.23383$61.69150
100$1.17593$117.59300
300$1.15326$345.97800
500$1.13102$565.51000
1000$1.10997$1109.97000