SI7461DP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7461DP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT P-Channel number of channels:1 1.9 W 60 V Continuous Drain Current (ID):8.6 A 121 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 6.25 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | S17-0173-Single |
| REACH SVHC | Unknown |
| Weight | 506.605978 mg |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 1.9 W |
| Power Dissipation | 1.9 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 8.6 A |
| Rds On Max | 14.5 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 205 ns |
| Element Configuration | Single |
| Rise Time | 20 ns |
| Gate Charge | 121 nC |
| Drain to Source Resistance | 11.5 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
Stock: 3444
Distributors
pcbx
pcbxUnit Price$1.47667
Ext.Price$1.47667
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.47667 | $1.47667 |
| 10 | $1.20403 | $12.04030 |
| 25 | $1.09018 | $27.25450 |
| 50 | $0.98710 | $49.35500 |
| 100 | $0.89376 | $89.37600 |
| 300 | $0.85544 | $256.63200 |
| 500 | $0.81878 | $409.39000 |
| 1000 | $0.78357 | $783.57000 |