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SI7478DP-T1-E3

Manufacturer:

Vishay

Mfr.Part #:

SI7478DP-T1-E3

Datasheet:
Description:

MOSFETs PowerPAK-SO-8 SMD/SMT N-Channel number of channels:1 1.9 W 60 V Continuous Drain Current (ID):15 A 160 nC

ParameterValue
Length4.9 mm
Width5.89 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance7.5 MΩ
Height1.04 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation1.9 W
Power Dissipation1.9 W
Threshold Voltage3 V
Number of Channels1
Continuous Drain Current (ID)15 A
Rds On Max7.5 mΩ
Drain to Source Voltage (Vdss)60 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time25 ns
Turn-Off Delay Time115 ns
Element ConfigurationSingle
Fall Time20 ns
Rise Time20 ns
Gate Charge160 nC
Drain to Source Resistance7.5 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)60 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V

Stock: 2

Distributors
pcbx
Unit Price$3.49632
Ext.Price$3.49632
QtyUnit PriceExt.Price
1$3.49632$3.49632
10$3.42682$34.26820
25$3.40740$85.18500
50$3.38809$169.40450
100$3.36891$336.89100