SI7615ADN-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7615ADN-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 52 W 20 V Continuous Drain Current (ID):35 A 122 nC
| Parameter | Value |
|---|---|
| Length | 3.4 mm |
| Width | 3.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 4.4 mΩ |
| Height | 1.12 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Max Power Dissipation | 52 W |
| Power Dissipation | 52 W |
| Threshold Voltage | -400 mV |
| Number of Channels | 1 |
| Input capacitance | 5.59 nF |
| Continuous Drain Current (ID) | 35 A |
| Rds On Max | 4.4 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 75 ns |
| Element Configuration | Single |
| Fall Time | 26 ns |
| Rise Time | 40 ns |
| Gate Charge | 122 nC |
| Drain to Source Resistance | 4.4 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.5 V |
| Drain to Source Breakdown Voltage | -20 V |
Stock: 6819
Distributors
pcbx
pcbxUnit Price$0.43776
Ext.Price$0.43776
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.43776 | $0.43776 |
| 10 | $0.34531 | $3.45310 |
| 25 | $0.31421 | $7.85525 |
| 50 | $0.28591 | $14.29550 |
| 100 | $0.26015 | $26.01500 |
| 300 | $0.24925 | $74.77500 |
| 500 | $0.23881 | $119.40500 |
| 1000 | $0.22504 | $225.04000 |