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SI7619DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7619DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 3.5 W -30 V Continuous Drain Current (ID):10.5 A 32 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance21 mΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
Number of Elements1
Max Power Dissipation27.8 W
Power Dissipation3.5 W
Number of Channels1
Input capacitance1.35 nF
Continuous Drain Current (ID)10.5 A
Rds On Max21 mΩ
Drain to Source Voltage (Vdss)30 V
FET Type(Transistor Polarity)P-Channel
Turn-On Delay Time10 ns
Turn-Off Delay Time45 ns
Fall Time12 ns
Rise Time8 ns
Gate Charge32 nC
Drain to Source Resistance17.5 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V

Stock: 351

Distributors
pcbx
Unit Price$0.55344
Ext.Price$0.55344
QtyUnit PriceExt.Price
1$0.55344$0.55344
10$0.48576$4.85760
25$0.46363$11.59075
50$0.44250$22.12500
100$0.42234$42.23400
300$0.41258$123.77400
500$0.40304$201.52000
1000$0.39266$392.66000