SI7850DP-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI7850DP-T1-E3
Datasheet:
Description:
MOSFETs PowerPAK-SO-8 SMD/SMT N-Channel number of channels:1 1.8 W 60 V Continuous Drain Current (ID):6.2 A 27 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 22 MΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | S17-0173-Single |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Output Current | 1.4 A |
| Max Power Dissipation | 1.8 W |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 6.2 A |
| Rds On Max | 22 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | 60 V |
| Gate Charge | 27 nC |
| Drain to Source Resistance | 18 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
Stock: 7560
Distributors
pcbx
pcbxUnit Price$1.62693
Ext.Price$1.62693
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.62693 | $1.62693 |
| 10 | $0.74464 | $7.44640 |
| 25 | $0.71867 | $17.96675 |
| 50 | $0.69360 | $34.68000 |
| 100 | $0.66941 | $66.94100 |
| 300 | $0.65690 | $197.07000 |
| 500 | $0.64462 | $322.31000 |
| 1000 | $0.58123 | $581.23000 |
| 3000 | $0.52407 | $1572.21000 |
| 5000 | $0.51805 | $2590.25000 |
| 10000 | $0.51210 | $5121.00000 |