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SI7850DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7850DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 1.8 W 60 V Continuous Drain Current (ID):6.2 A 18 nC

ParameterValue
Length4.9 mm
Width5.89 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance22 MΩ
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
Manufacturer Package IdentifierS17-0173-Single
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation1.8 W
Power Dissipation1.8 W
Threshold Voltage3 V
Number of Channels1
Continuous Drain Current (ID)6.2 A
Rds On Max22 mΩ
Drain to Source Voltage (Vdss)60 V
Turn-On Delay Time10 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Fall Time10 ns
Rise Time10 ns
Gate Charge18 nC
Drain to Source Resistance18 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)60 V
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

Stock: 1314

Distributors
pcbx
Unit Price$1.65173
Ext.Price$1.65173
QtyUnit PriceExt.Price
1$1.65173$1.65173
10$1.13278$11.32780
25$1.00381$25.09525
50$0.88952$44.47600
100$0.78824$78.82400
300$0.71282$213.84600
500$0.64462$322.31000
1000$0.58123$581.23000
3000$0.52407$1572.21000