SI7852ADP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7852ADP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 5 W 80 V Continuous Drain Current (ID):12 A 45 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 17 MΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | S17-0173-Single |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 5 W |
| Power Dissipation | 5 W |
| Threshold Voltage | 4.5 V |
| Number of Channels | 1 |
| Input capacitance | 1.825 nF |
| Continuous Drain Current (ID) | 12 A |
| Rds On Max | 17 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 26 ns |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Rise Time | 9 ns |
| Gate Charge | 45 nC |
| Drain to Source Resistance | 14 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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