SI7852DP-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI7852DP-T1-E3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 1.9 W 80 V Continuous Drain Current (ID):7.6 A 41 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 16.5 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 1.9 W |
| Power Dissipation | 1.9 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 7.6 A |
| Rds On Max | 16.5 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Fall Time | 11 ns |
| Rise Time | 11 ns |
| Gate Charge | 41 nC |
| Drain to Source Resistance | 13.5 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 6292
Distributors
pcbx
pcbxUnit Price$1.34566
Ext.Price$1.34566
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.34566 | $1.34566 |
| 10 | $1.13877 | $11.38770 |
| 25 | $1.09984 | $27.49600 |
| 50 | $1.06224 | $53.11200 |
| 100 | $1.02591 | $102.59100 |
| 300 | $1.00081 | $300.24300 |
| 500 | $0.97633 | $488.16500 |
| 1000 | $0.96350 | $963.50000 |
| 3000 | $0.83270 | $2498.10000 |
| 5000 | $0.82928 | $4146.40000 |
| 10000 | $0.82586 | $8258.60000 |