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SI7852DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7852DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK-SO-8 SMD/SMT N-Channel number of channels:1 1.9 W 80 V Continuous Drain Current (ID):7.6 A 41 nC

ParameterValue
Length4.9 mm
Width5.89 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.04 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation1.9 W
Power Dissipation1.9 W
Threshold Voltage2 V
Number of Channels1
Input capacitance2.32 nF
Continuous Drain Current (ID)7.6 A
Rds On Max16.5 mΩ
Drain to Source Voltage (Vdss)80 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time17 ns
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Fall Time31 ns
Rise Time11 ns
Gate Charge41 nC
Drain to Source Resistance16.5 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)80 V
Gate to Source Threshold Voltage2 V

Stock: 2209

Distributors
pcbx
Unit Price$1.13270
Ext.Price$1.13270
QtyUnit PriceExt.Price
1$1.13270$1.13270
10$1.01242$10.12420
25$0.96199$24.04975
50$0.91407$45.70350
100$0.86854$86.85400
300$0.85110$255.33000
500$0.83401$417.00500
1000$0.81752$817.52000