SI7898DP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI7898DP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 1.9 W 150 V Continuous Drain Current (ID):3 A 17 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 5.89 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 85 mΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 1.9 W |
| Power Dissipation | 1.9 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 3 A |
| Rds On Max | 85 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 24 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | 150 V |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 85 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 150 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 988
Distributors
pcbx
pcbxUnit Price$1.17533
Ext.Price$1.17533
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.17533 | $1.17533 |
| 10 | $0.97690 | $9.76900 |
| 25 | $0.89567 | $22.39175 |
| 50 | $0.82120 | $41.06000 |
| 100 | $0.75291 | $75.29100 |
| 300 | $0.72484 | $217.45200 |
| 500 | $0.69782 | $348.91000 |
| 1000 | $0.67337 | $673.37000 |