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SI7997DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI7997DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 Dual SMD/SMT P-Channel number of channels:2 3.5 W -30 V Continuous Drain Current (ID):-20.8 A 106 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance5.5 mΩ
Height1.12 mm
PackagingReel
Lead FreeLead Free
RoHSCompliant
REACH SVHCNo SVHC
Weight506.605978 mg
Number of Elements2
Max Power Dissipation46 W
Power Dissipation3.5 W
Threshold Voltage-2.2 V
Number of Channels2
Input capacitance6.2 nF
Continuous Drain Current (ID)-20.8 A
Rds On Max5.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Turn-On Delay Time15 ns
Turn-Off Delay Time115 ns
Element ConfigurationDual
Gate Charge106 nC
Drain to Source Resistance4.5 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 928

Distributors
pcbx
Unit Price$1.90752
Ext.Price$1.90752
QtyUnit PriceExt.Price
1$1.90752$1.90752
10$1.55424$15.54240
25$1.39177$34.79425
50$1.24628$62.31400
100$1.11599$111.59900
300$1.06298$318.89400
500$1.01249$506.24500
1000$0.96748$967.48000