SI8461DB-T2-E1
Manufacturer:
Vishay
Mfr.Part #:
SI8461DB-T2-E1
Datasheet:
Description:
MOSFETs XFBGA-4 SMD/SMT P-Channel number of channels:1 780 mW -20 V Continuous Drain Current (ID):-3.7 A 24 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 4 |
| Resistance | 100 mΩ |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 780 mW |
| Power Dissipation | 780 mW |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Input capacitance | 610 pF |
| Continuous Drain Current (ID) | -3.7 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 25 ns |
| Gate Charge | 24 nC |
| Drain to Source Resistance | 136 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
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