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SI8808DB-T2-E1

Manufacturer:

Vishay

Mfr.Part #:

SI8808DB-T2-E1

Datasheet:
Description:

MOSFETs MicroFoot-4 SMD/SMT N-Channel number of channels:1 900 mW 30 V Continuous Drain Current (ID):2.5 A 10 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins4
PackagingReel
RoHSCompliant
Number of Elements1
Max Power Dissipation500 mW
Power Dissipation900 mW
Number of Channels1
Input capacitance330 pF
Continuous Drain Current (ID)2.5 A
Rds On Max95 mΩ
Drain to Source Voltage (Vdss)30 V
FET Type(Transistor Polarity)N-Channel
Element ConfigurationSingle
Gate Charge10 nC
Drain to Source Resistance95 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541210080
Gate to Source Threshold Voltage400 mV

Stock: 9270

Distributors
pcbx
Unit Price$0.41891
Ext.Price$0.41891
QtyUnit PriceExt.Price
1$0.41891$0.41891
10$0.26588$2.65880
50$0.21481$10.74050
100$0.17355$17.35500
500$0.13251$66.25500
1000$0.11883$118.83000
3000$0.09147$274.41000
5000$0.08427$421.35000
10000$0.07763$776.30000