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SI8810EDB-T2-E1

Manufacturer:

Vishay

Mfr.Part #:

SI8810EDB-T2-E1

Datasheet:
Description:

MOSFETs MicroFoot-4 SMD/SMT N-Channel number of channels:1 900 mW 20 V Continuous Drain Current (ID):2.1 A 8 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins4
PackagingReel
Radiation HardeningNo
RoHSCompliant
Contact PlatingTin
Number of Elements1
Output Current1.4 A
Max Power Dissipation500 mW
Power Dissipation900 mW
Number of Channels1
Input capacitance245 pF
Continuous Drain Current (ID)2.1 A
Rds On Max72 mΩ
Drain to Source Voltage (Vdss)20 V
FET Type(Transistor Polarity)N-Channel
Turn-Off Delay Time25 ns
Fall Time7 ns
Rise Time12 ns
Gate Charge8 nC
Drain to Source Resistance72 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)20 V
Gate to Source Threshold Voltage400 mV

Stock: 9768

Distributors
pcbx
Unit Price$0.33171
Ext.Price$0.33171
QtyUnit PriceExt.Price
1$0.33171$0.33171
10$0.22741$2.27410
50$0.16616$8.30800
100$0.12140$12.14000
500$0.11370$56.85000
1000$0.10088$100.88000
3000$0.07259$217.77000
5000$0.06908$345.40000
10000$0.06574$657.40000