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SI8816EDB-T2-E1

Manufacturer:

Vishay

Mfr.Part #:

SI8816EDB-T2-E1

Datasheet:
Description:

MOSFETs MicroFoot-4 SMD/SMT N-Channel number of channels:1 900 mW 30 V Continuous Drain Current (ID):2.3 A 8 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins4
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Output Current1.4 A
Max Power Dissipation900 mW
Power Dissipation900 mW
Threshold Voltage600 mV
Number of Channels1
Input capacitance195 pF
Continuous Drain Current (ID)2.3 A
Rds On Max109 mΩ
Drain to Source Voltage (Vdss)30 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time15 ns
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Fall Time10 ns
Rise Time20 ns
Gate Charge8 nC
Drain to Source Resistance109 mΩ
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541210080
Gate to Source Threshold Voltage600 mV

Stock: 2251

Distributors
pcbx
Unit Price$0.33770
Ext.Price$0.33770
QtyUnit PriceExt.Price
1$0.33770$0.33770
10$0.22741$2.27410
50$0.15651$7.82550
100$0.10772$10.77200
500$0.10430$52.15000
1000$0.09584$95.84000
3000$0.08806$264.18000
5000$0.06822$341.10000