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SI9407BDY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI9407BDY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.4 W -60 V Continuous Drain Current (ID):-3.2 A 14.5 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance120 mΩ
Height1.55 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation5 W
Power Dissipation2.4 W
Threshold Voltage-3 V
Number of Channels1
Input capacitance600 pF
Continuous Drain Current (ID)-3.2 A
Rds On Max120 mΩ
Drain to Source Voltage (Vdss)-60 V
Turn-On Delay Time10 ns
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Fall Time30 ns
Rise Time70 ns
Gate Charge14.5 nC
Drain to Source Resistance100 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-60 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 2373

Distributors
pcbx
Unit Price$0.53232
Ext.Price$0.53232
QtyUnit PriceExt.Price
1$0.53232$0.53232
10$0.41885$4.18850
25$0.38017$9.50425
50$0.34507$17.25350
100$0.31321$31.32100
300$0.29917$89.75100
500$0.28576$142.88000
1000$0.27044$270.44000