SI9926CDY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI9926CDY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 20 V Continuous Drain Current (ID):8 A 22 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 18 mΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.187 g |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 2 |
| Input capacitance | 1.2 nF |
| Continuous Drain Current (ID) | 8 A |
| Rds On Max | 18 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Dual |
| Rise Time | 12 ns |
| Gate Charge | 22 nC |
| Drain to Source Resistance | 15 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 600 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 58
Distributors
pcbx
pcbxUnit Price$0.40704
Ext.Price$0.40704
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.40704 | $0.40704 |
| 10 | $0.39811 | $3.98110 |
| 25 | $0.39546 | $9.88650 |
| 50 | $0.39283 | $19.64150 |
| 100 | $0.39023 | $39.02300 |