SI9945BDY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI9945BDY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 60 V Continuous Drain Current (ID):4.3 A 13 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 58 mΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.187 g |
| Number of Elements | 2 |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 2 |
| Input capacitance | 665 pF |
| Continuous Drain Current (ID) | 4.3 A |
| Rds On Max | 80 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Dual |
| Rise Time | 15 ns |
| Gate Charge | 13 nC |
| Drain to Source Resistance | 46 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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