SIA415DJ-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIA415DJ-T1-GE3
Datasheet:
Description:
MOSFETs SC-70-6 SMD/SMT P-Channel number of channels:1 3.5 W -20 V Continuous Drain Current (ID):12 A 47 nC
| Parameter | Value |
|---|---|
| Length | 2.05 mm |
| Width | 2.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 35 mΩ |
| Height | 750 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 19 W |
| Power Dissipation | 3.5 W |
| Threshold Voltage | -1.5 V |
| Number of Channels | 1 |
| Input capacitance | 1.25 nF |
| Continuous Drain Current (ID) | 12 A |
| Rds On Max | 35 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Rise Time | 50 ns |
| Gate Charge | 47 nC |
| Drain to Source Resistance | 35 mΩ |
| Nominal Vgs | -1.5 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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