SIA444DJT-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIA444DJT-T1-GE3
Datasheet:
Description:
MOSFETs SC-70-6 SMD/SMT N-Channel number of channels:1 3.5 W, 19 W 30 V Continuous Drain Current (ID):12 A 15 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 3.5 W, 19 W |
| Number of Channels | 1 |
| Input capacitance | 560 pF |
| Continuous Drain Current (ID) | 12 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 15 nC |
| Drain to Source Resistance | 17 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Gate to Source Threshold Voltage | 2.2 V |
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