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SIA445EDJ-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIA445EDJ-T1-GE3

Datasheet:
Description:

MOSFETs SC-70-6 SMD/SMT P-Channel number of channels:1 3.5 W -20 V Continuous Drain Current (ID):-12 A 48 nC

ParameterValue
Length2.05 mm
Width2.05 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
Resistance16.5 mΩ
Height750 µm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation19 W
Power Dissipation3.5 W
Threshold Voltage-500 mV
Number of Channels1
Input capacitance2.13 nF
Continuous Drain Current (ID)-12 A
Rds On Max16.5 mΩ
Drain to Source Voltage (Vdss)-20 V
Turn-On Delay Time25 ns
Turn-Off Delay Time55 ns
Element ConfigurationSingle
Gate Charge48 nC
Drain to Source Resistance13.5 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V
FET Type(Transistor Polarity)P-Channel

Stock: 1069

Distributors
pcbx
Unit Price$0.18016
Ext.Price$0.18016
QtyUnit PriceExt.Price
1$0.18016$0.18016
10$0.16744$1.67440
50$0.15562$7.78100
100$0.14332$14.33200
500$0.13200$66.00000
1000$0.12905$129.05000
3000$0.12616$378.48000
5000$0.12265$613.25000