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SIA910EDJ-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIA910EDJ-T1-GE3

Datasheet:
Description:

MOSFETs SC-70-6 SMD/SMT N-Channel number of channels:2 1.9 W 12 V Continuous Drain Current (ID):4.5 A 16 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
Resistance28 MΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements2
Max Power Dissipation7.8 W
Power Dissipation1.9 W
Threshold Voltage400 mV
Number of Channels2
Input capacitance455 pF
Continuous Drain Current (ID)4.5 A
Rds On Max28 mΩ
Drain to Source Voltage (Vdss)12 V
Turn-On Delay Time10 ns
Turn-Off Delay Time25 ns
Element ConfigurationDual
Fall Time12 ns
Rise Time12 ns
Gate Charge16 nC
Drain to Source Resistance23 mΩ
Nominal Vgs400 mV
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)12 V
Schedule B8541290080
Gate to Source Threshold Voltage400 mV
FET Type(Transistor Polarity)N-Channel

Stock: 105082

Distributors
pcbx
Unit Price$0.36933
Ext.Price$0.36933
QtyUnit PriceExt.Price
1$0.36933$0.36933
10$0.27529$2.75290
25$0.24608$6.15200
50$0.21997$10.99850
100$0.19663$19.66300
300$0.19099$57.29700
500$0.18552$92.76000
1000$0.16757$167.57000
3000$0.15303$459.09000
5000$0.13821$691.05000
10000$0.12482$1248.20000