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SIA975DJ-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIA975DJ-T1-GE3

Datasheet:
Description:

MOSFETs SC-70-6 SMD/SMT P-Channel number of channels:2 1.9 W -12 V Continuous Drain Current (ID):4.5 A 26 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
Resistance41 mΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements2
Max Power Dissipation7.8 W
Power Dissipation1.9 W
Threshold Voltage-400 mV
Number of Channels2
Input capacitance1.5 nF
Continuous Drain Current (ID)4.5 A
Rds On Max41 mΩ
Drain to Source Voltage (Vdss)12 V
Turn-On Delay Time22 ns
Turn-Off Delay Time32 ns
Element ConfigurationDual
Fall Time15 ns
Rise Time22 ns
Gate Charge26 nC
Drain to Source Resistance41 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-12 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 8637

Distributors
pcbx
Unit Price$0.63180
Ext.Price$0.63180
QtyUnit PriceExt.Price
1$0.63180$0.63180
10$0.39070$3.90700
25$0.33993$8.49825
50$0.29576$14.78800
100$0.25733$25.73300
300$0.22592$67.77600
500$0.19834$99.17000
1000$0.17868$178.68000
3000$0.14277$428.31000
5000$0.12653$632.65000