SIHA22N60AE-E3
Manufacturer:
Vishay
Mfr.Part #:
SIHA22N60AE-E3
Datasheet:
Description:
MOSFETs TO-220 Through Hole N-Channel number of channels:1 33 W 650 V Continuous Drain Current (ID):20 A 48 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Output Current | 1.4 A |
| Power Dissipation | 33 W |
| Number of Channels | 1 |
| Input capacitance | 1.451 nF |
| Continuous Drain Current (ID) | 20 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 48 nC |
| Drain to Source Resistance | 156 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 378
Distributors
pcbx
pcbxUnit Price$2.85974
Ext.Price$2.85974
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.85974 | $2.85974 |
| 10 | $1.89025 | $18.90250 |
| 25 | $1.74350 | $43.58750 |
| 50 | $1.60814 | $80.40700 |
| 100 | $1.48330 | $148.33000 |
| 300 | $1.39974 | $419.92200 |
| 500 | $1.32087 | $660.43500 |
| 1000 | $1.02591 | $1025.91000 |