SIHB16N50C-E3
Manufacturer:
Vishay
Mfr.Part #:
SIHB16N50C-E3
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 38 W 560 V Continuous Drain Current (ID):16 A 45 nC
| Parameter | Value |
|---|---|
| Gate Charge | 45 nC |
| Gate to Source Threshold Voltage | 5 V |
| Continuous Drain Current (ID) | 16 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 380 mΩ |
| Input capacitance | 1.9 nF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 38 W |
| Drain to Source Breakdown Voltage (Vds) | 560 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||