SIHB22N60E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHB22N60E-GE3
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 227 W 600 V Continuous Drain Current (ID):21 A 57 nC
| Parameter | Value |
|---|---|
| Length | 10.67 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 180 mΩ |
| Height | 4.83 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 227 W |
| Power Dissipation | 227 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 1.92 nF |
| Continuous Drain Current (ID) | 21 A |
| Rds On Max | 180 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 59 ns |
| Element Configuration | Single |
| Fall Time | 54 ns |
| Rise Time | 68 ns |
| Gate Charge | 57 nC |
| Drain to Source Resistance | 180 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 6402
Distributors
pcbx
pcbxUnit Price$3.29148
Ext.Price$3.29148
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.29148 | $3.29148 |
| 10 | $2.27155 | $22.71550 |
| 25 | $2.20069 | $55.01725 |
| 50 | $2.13204 | $106.60200 |
| 100 | $2.06551 | $206.55100 |
| 300 | $1.76143 | $528.42900 |
| 500 | $1.50211 | $751.05500 |
| 1000 | $1.33283 | $1332.83000 |