SIHB33N60E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHB33N60E-GE3
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 278 W 600 V Continuous Drain Current (ID):33 A 100 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 278 W |
| Power Dissipation | 278 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 3.508 nF |
| Continuous Drain Current (ID) | 33 A |
| Rds On Max | 99 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 56 ns |
| Turn-Off Delay Time | 150 ns |
| Element Configuration | Single |
| Fall Time | 80 ns |
| Rise Time | 90 ns |
| Gate Charge | 100 nC |
| Drain to Source Resistance | 99 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 496
Distributors
pcbx
pcbxUnit Price$3.56677
Ext.Price$3.56677
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.56677 | $3.56677 |
| 10 | $2.87855 | $28.78550 |
| 25 | $2.58981 | $64.74525 |
| 50 | $2.33003 | $116.50150 |
| 100 | $2.09629 | $209.62900 |
| 300 | $1.92003 | $576.00900 |
| 500 | $1.75859 | $879.29500 |
| 1000 | $1.73380 | $1733.80000 |