SIHB33N60EF-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHB33N60EF-GE3
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 278 W 600 V Continuous Drain Current (ID):33 A 103 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 278 W |
| Number of Channels | 1 |
| Input capacitance | 3.454 nF |
| Continuous Drain Current (ID) | 33 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 103 nC |
| Drain to Source Resistance | 98 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 109
Distributors
pcbx
pcbxUnit Price$4.59354
Ext.Price$4.59354
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $4.59354 | $4.59354 |
| 10 | $3.26669 | $32.66690 |
| 25 | $2.94371 | $73.59275 |
| 50 | $2.65266 | $132.63300 |
| 100 | $2.39038 | $239.03800 |
| 300 | $2.20492 | $661.47600 |
| 500 | $2.03387 | $1016.93500 |