SIHB33N60ET1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHB33N60ET1-GE3
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 278 W 600 V Continuous Drain Current (ID):33 A 103 nC
| Parameter | Value |
|---|---|
| Gate Charge | 103 nC |
| Gate to Source Threshold Voltage | 4 V |
| Continuous Drain Current (ID) | 33 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 98 mΩ |
| Input capacitance | 3.508 nF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 278 W |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1020
Distributors
pcbx
pcbxUnit Price$4.35587
Ext.Price$4.35587
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $4.35587 | $4.35587 |
| 10 | $3.12306 | $31.23060 |
| 25 | $2.91059 | $72.76475 |
| 50 | $2.71257 | $135.62850 |
| 100 | $2.52803 | $252.80300 |
| 300 | $2.37051 | $711.15300 |
| 500 | $2.22280 | $1111.40000 |
| 1000 | $2.08432 | $2084.32000 |