SIHD4N80E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHD4N80E-GE3
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 69 W 800 V Continuous Drain Current (ID):4.3 A 16 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Output Current | 1.4 A |
| Power Dissipation | 69 W |
| Number of Channels | 1 |
| Input capacitance | 622 pF |
| Continuous Drain Current (ID) | 4.3 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 16 nC |
| Drain to Source Resistance | 1.1 Ω |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Gate to Source Threshold Voltage | 2 V |
Stock: 860
Distributors
pcbx
pcbxUnit Price$1.18237
Ext.Price$1.18237
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.18237 | $1.18237 |
| 10 | $0.76345 | $7.63450 |
| 25 | $0.67163 | $16.79075 |
| 50 | $0.59085 | $29.54250 |
| 100 | $0.51980 | $51.98000 |
| 300 | $0.50064 | $150.19200 |
| 500 | $0.48218 | $241.09000 |
| 1000 | $0.46080 | $460.80000 |
| 3000 | $0.44970 | $1349.10000 |
| 5000 | $0.44286 | $2214.30000 |