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SIHD6N62E-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIHD6N62E-GE3

Datasheet:
Description:

MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 78 W 620 V Continuous Drain Current (ID):6 A 17 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
PackagingBulk
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Max Power Dissipation78 W
Power Dissipation78 W
Number of Channels1
Input capacitance578 pF
Continuous Drain Current (ID)6 A
Rds On Max900 mΩ
Drain to Source Voltage (Vdss)620 V
Turn-On Delay Time12 ns
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Fall Time16 ns
Rise Time10 ns
Gate Charge17 nC
Drain to Source Resistance900 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)620 V
Schedule B8541290080
Gate to Source Threshold Voltage4 V
FET Type(Transistor Polarity)N-Channel

Stock: 1486

Distributors
pcbx
Unit Price$1.41406
Ext.Price$1.41406
QtyUnit PriceExt.Price
1$1.41406$1.41406
10$0.90708$9.07080
25$0.80115$20.02875
50$0.70759$35.37950
100$0.62496$62.49600
300$0.57509$172.52700
500$0.52920$264.60000
1000$0.44286$442.86000
3000$0.38301$1149.03000