SIHF12N50C-E3
Manufacturer:
Vishay
Mfr.Part #:
SIHF12N50C-E3
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 36 W 560 V Continuous Drain Current (ID):12 A 32 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 36 W |
| Number of Channels | 1 |
| Input capacitance | 1.375 nF |
| Continuous Drain Current (ID) | 12 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 32 nC |
| Drain to Source Resistance | 555 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 560 V |
| Gate to Source Threshold Voltage | 5 V |
Stock: 3
Distributors
pcbx
pcbxUnit Price$0.68381
Ext.Price$0.68381
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.68381 | $0.68381 |
| 10 | $0.66893 | $6.68930 |
| 25 | $0.66392 | $16.59800 |
| 50 | $0.65894 | $32.94700 |
| 100 | $0.65591 | $65.59100 |